Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ∼20 nm, integrated within ∼100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ∼20 nm Pt/C nanodots, tunnel-coupled to Pt/C...

Pattern transfer into silicon using sub-10 nm masks made by electron beam induced deposition

To demonstrate the possibility of using EBID masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20-40 nm EBID masks, that were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine and boron trichloride can selectively etch silicon when using 20...

Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition

To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride...