"uuid","repository link","title","author","contributor","publication year","abstract","subject topic","language","publication type","publisher","isbn","issn","patent","patent status","bibliographic note","access restriction","embargo date","faculty","department","research group","programme","project","coordinates"
"uuid:6abc1df9-2b05-40d4-b5f9-f52f9d05154a","http://resolver.tudelft.nl/uuid:6abc1df9-2b05-40d4-b5f9-f52f9d05154a","Extended Nijboer-Zernike (ENZ) based mask imaging: Efficient coupling of electromagnetic field solvers and the ENZ imaging algorithm","Janssen, O.T.A.; Van Haver, S.; Janssen, A.J.E.M.; Braat, J.J.M.; Urbach, H.P.; Pereira, S.F.","","2008","Results are presented of mask imaging using the Extended Nijboer-Zernike (ENZ) theory of diffraction. We show that the efficiency of a mask imaging algorithm, derived from this theory, can be increased. By adjusting the basic Finite Difference Time Domain (FDTD) algorithm, we can calculate the near field of isolated mask structures efficiently, without resorting to periodic domains. In addition, the calculations for the points on the entrance sphere of the imaging system can be done separately with a Fourier transformed Stratton-Chu nearto-far-field transformation. By clever sampling in the radial direction of the entrance pupil, the computational effort is already reduced by at least a factor of 4.","mask imaging; Extended Nijboer-Zernike theory; puplil sampling; Stratton-Chu; FDTD","en","conference paper","SPIE","","","","","","","","Applied Sciences","?IST-Optics Research Groep","","","",""
"uuid:03b0de69-3535-4188-8937-25d8bf7b0641","http://resolver.tudelft.nl/uuid:03b0de69-3535-4188-8937-25d8bf7b0641","Aerial image based lens metrology for wafer steppers","Dirksen, P.; Braat, J.J.M.; Janssen, A.J.E.M.; Leeuwestein, A.; Matsuyama, T.; Noda, T.","","2006","Phase Measurement Interferometers (PMI) are widely used during the manufacturing process of high quality lenses. Although they have an excellent reproducibility and sensitivity, the set-up is expensive and the accuracy of the measurement needs to be checked frequently. This paper discusses an alternative lens metrology method that is based on an aerial image measurement. We discuss the Extended Nijboer-Zernike (ENZ) method and its application to aberration measurement of a high-NA optical system of a wafer stepper. ENZ is based on the observation of the through-focus intensity point-spread function of the projection lens. The advantage of ENZ is a simple set-up that is easy to run and maintain and provides good accuracy. Therefore the method is useful during lens assembly in the factory. The mathematical framework of ENZ is shown and the experimental procedure to extract aberrations for a high-NA lens is demonstrated on a high-NA DUV lithographic lens. PMI data is given as reference data. It is shown that ENZ provides an attractive alternative to the interferometer.","optical lithography; aberrations; PMI; extended Nijboer-Zernike theory","en","conference paper","SPIE","","","","","","","","Applied Sciences","IST/Optica","","","",""
"uuid:45a77fbd-2b5e-4381-a1bd-2d46830217c8","http://resolver.tudelft.nl/uuid:45a77fbd-2b5e-4381-a1bd-2d46830217c8","Estimating resist parameters in optical lithography using the extended Nijboer-Zernike theory","Dirksen, P.; Braat, J.; Janssen, A.J.E.M.","","2006","","optical lithography; resist; diffusion constant; focus noise; pointspread function; extended Nijboer-Zernike theory","en","journal article","SPIE","","","","","","","","Applied Sciences","Optics Research Group","","","",""
"uuid:9b17f08c-0748-4175-b4b4-2365304ae004","http://resolver.tudelft.nl/uuid:9b17f08c-0748-4175-b4b4-2365304ae004","Aberration retrieval for high-NA optical systems using the Extended Nijboer-Zernike theory","Dirksen, P.; Braat, J.J.M.; Janssen, A.J.E.M.; Leeuwesteijn, A.","","2005","","optical lithography; high NA; vectorial diffraction formalism; point-spread function; Extended Nijboer-Zernike theory","en","conference paper","SPIE","","","","","","","","Applied Sciences","Imaging Science and Technology","","","",""
"uuid:1fb9172a-4c3a-4e4f-9359-db151ee0c8bd","http://resolver.tudelft.nl/uuid:1fb9172a-4c3a-4e4f-9359-db151ee0c8bd","Determination of resist parameters using the extended Nijboer-Zernike theory","Dirksen, P.; Braat, J.; Janssen, A.J.E.M.; Leeuwestein, A.; Kwinten, H.; Van Steenwinckel, D.","","2004","This study presents an experimental method to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminator setting on the one hand and process parameters introducing blur on the other.","optical lithography; resist; diffusion constant; focus noise; point-spread function; Extended Nijboer-Zernike theory","en","conference paper","SPIE","","","","","","","","Applied Sciences","Imaging Science and Technology","","","",""