Searched for: subject:"field%5C+effect%5C+transistors"
(1 - 20 of 27)

Pages

document
Papadopoulos, N. (author), Island, J.O. (author), van der Zant, H.S.J. (author), Steele, G.A. (author)
Phase engineering of MoS₂ transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS₂ flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS&#x2082...
journal article 2018
document
Molina-Mendoza, Aday J. (author), Island, J.O. (author), Paz, Wendel S. (author), Clamagirand, Jose Manuel (author), Ares, Jose Ramón (author), Flores, Eduardo (author), Leardini, Fabrice (author), Sánchez, Carlos (author), Agraït, Nicolás (author), Rubio-Bollinger, Gabino (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), Palacios, JJ (author), Castellanos-Gomez, Andres (author)
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...
journal article 2017
document
Janissen, R. (author), Sahoo, Prasana K. (author), Santos, Clelton A. (author), Da Silva, Aldeliane M. (author), Von Zuben, Antonio A.G. (author), Souto, Denio E.P. (author), Costa, Alexandre D.T. (author), Celedon, Paola (author), Zanchin, Nilson I.T. (author), Almeida, Diogo B. (author), Oliveira, Douglas S. (author)
Electrically active field-effect transistors (FET) based biosensors are of paramount importance in life science applications, as they offer direct, fast, and highly sensitive label-free detection capabilities of several biomolecules of specific interest. In this work, we report a detailed investigation on surface functionalization and...
journal article 2017
document
Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...
journal article 2015
document
Mescher, M. (author), Brinkman, A.G.M. (author), Bosma, D. (author), Klootwijk, J.H. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)
In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are...
journal article 2014
document
Cao, A. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)
Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW...
journal article 2013
document
Nishiguchi, K. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)
We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...
journal article 2013
document
Chiba, T. (author), Bauer, G.E.W. (author), Takahashi, S. (author)
We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and...
journal article 2013
document
Buchs, G. (author), Barkelid, K.M. (author), Bagiante, S. (author), Steele, G.A. (author), Zwiller, V. (author)
We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...
journal article 2011
document
Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)
In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...
journal article 2010
document
Grzegorczyk, W.J. (author)
The photogeneration and mobility of charge carriers in organic thin films, including bulk heterojunctions (BHJs), have been studied with the time resolved microwave photo-conductance technique (TRMC). The TRMC technique allows the electrodeless measurement of the photoconductance with nanosecond time resolution. The research focuses on the way...
doctoral thesis 2010
document
Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)
In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...
journal article 2010
document
Hrauda, N. (author), Zhang, J.J. (author), Stangl, J. (author), Rehman-Khan, A. (author), Bauer, G. (author), Stoffel, M. (author), Schmidt, O.G. (author), Jovanovich, V. (author), Nanver, L.K. (author)
In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...
journal article 2009
document
Heller, I. (author)
This thesis describes the experimental study of devices based on single carbon nanotubes in the context of (bio)sensing in aqueous solutions. Carbon nanotubes are cylindrical molecules of sp2- carbon, about one nanometer in diameter and typically several micrometers long, which have semiconducting or metallic electronic properties. Nanotube...
doctoral thesis 2009
document
Molinari, A. (author), Gutiérrez, I. (author), Hulea, I.N. (author), Russo, S. (author), Morpurgo, A.F. (author)
The authors report a systematic study of the bias-dependent contact resistance in rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt electrodes. They show that the reproducibility in the values of contact resistance strongly depends on the metal, ranging from a factor of 2 for Ni to more than three orders of magnitude...
journal article 2007
document
Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)
The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....
journal article 2007
document
Hulea, I.N. (author), Russo, S. (author), Molinari, A. (author), Morpurgo, A.F. (author)
We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300??m. We find that the contact resistance can be as low as 100???cm with narrowly spread fluctuations. For comparison, we have...
journal article 2006
document
De Boer, R.W.I. (author), Stassen, A.F. (author), Craciun, M.F. (author), Mulder, C.L. (author), Molinari, A. (author), Rogge, S. (author), Morpurgo, A.F. (author)
We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3?cm2/V?s in both materials. The highest...
journal article 2005
document
Yan, F. (author), Migliorato, P. (author), Hong, Y. (author), Rana, V. (author), Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), Inoue, S. (author), Shimoda, T. (author)
The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can...
journal article 2005
document
De Boer, R.W.I. (author), Iosad, N.N. (author), Stassen, A.F. (author), Klapwijk, T.M. (author), Morpurgo, A.F. (author)
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...
journal article 2005
Searched for: subject:"field%5C+effect%5C+transistors"
(1 - 20 of 27)

Pages