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Arslan, A. (author)Digital flat panel X-ray imagers are currently using a-Si and poly-Si thin-film-transistors (TFTs). a-Si TFT permits the use of large area substrates, however, due to the amorphous nature, the carrier mobility is very low (<1 cm2/Vs). Poly-Si TFT improves the mobility (~150 cm2/Vs) but due to random grain boundaries, the defect density is still...doctoral thesis 2015
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Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...conference paper 2011