CMOS integrated circuits for the quantum information sciences

Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated circuits can be used to complement quantum mechanical systems, enabling more compact, performant...

Architecture and applications of a high resolution gated SPAD image sensor

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 ?m. The fill-factor of 5% can be increased to 30% with the use of microlenses....

Timing optimization utilizing order statistics and multichannel digital silicon photomultipliers

We present an optimization technique utilizing order statistics with a multichannel digital silicon photomultiplier (MD-SiPM) for timing measurements. Accurate timing measurements are required by 3D rangefinding and time-of-flight positron emission tomography, to name a few applications. We have demonstrated the ability of the MD-SiPM to detect...

Toward one giga frames per second: Evolution of in Situ storage image sensors

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct...

Video-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm

A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 ?m complementary metaloxide-semiconductor single-photon...

3D near-infrared imaging based on a single-photon avalanche diode array sensor

An imager for optical tomography was designed based on a detector with 128x128 single-photon pixels that included a bank of 32 time-to-digital converters. Due to the high spatial resolution and the possibility of performing time resolved measurements, a new contact-less setup has been conceived in which scanning of the object is not necessary....

A new single-photon avalanche diode in 90nm standard CMOS technology

A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing...

Real-time fluorescence lifetime imaging system with a 32 × 32 0.13?m CMOS low dark-count single-photon avalanche diode array

A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13?m CMOS singlephoton avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called ‘Integration for Extraction Method’ (IEM) [J....

On pixel detection threshold in the gigavision camera