Searched for: subject%3A%22ion%255C+beam%255C+effects%22
(1 - 5 of 5)
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Illiberi, A. (author), Kudlacek, P. (author), Smets, A.H.M. (author), Creatore, M. (author), Van de Sanden, M.C.M. (author)
We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015?ions?cm?2?s?1). This result suggests that the ion...
journal article 2011
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Johnson, B.C. (author), Tettamanzi, G.C. (author), Alves, A.D.C. (author), Thompson, S. (author), Yang, C. (author), Verduijn, J. (author), Mol, J.A. (author), Wacquez, R. (author), Vinet, M. (author), Sanquer, M. (author), Rogge, S. (author), Jamieson, D.N. (author)
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...
journal article 2010
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Chen, P. (author), Salemink, H.W.M. (author), Alkemade, P.F.A. (author)
The authors report the results of investigating two models for ion-beam-induced deposition (IBID). These models describe IBID in terms of the impact of secondary electrons and of sputtered atoms, respectively. The yields of deposition, sputtering, and secondary electron emission, as well as the energy spectra of the secondary electrons were...
journal article 2009
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Sanford, C.A. (author), Stern, L. (author), Barriss, L. (author), Farkas, L. (author), DiManna, M. (author), Mello, R. (author), Maas, D.J. (author), Alkemade, P.F.A. (author)
Helium ion microscopy is now a demonstrated practical technology that possesses the resolution and beam currents necessary to perform nanofabrication tasks, such as circuit edit applications. Due to helium’s electrical properties and sample interaction characteristics relative to gallium, it is likely that the properties and deposition...
journal article 2009
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Castaldo, V. (author), Hagen, C.W. (author), Rieger, B. (author), Kruit, P. (author)
In principle, a scanning ion microscope can produce smaller probe sizes than a scanning electron microscope because the diffraction contribution is smaller. However, the imaging resolution is often severely limited by the sputtering damage. In this article, an experimental procedure to establish the limit of a focused ion beam system for imaging...
journal article 2008
Searched for: subject%3A%22ion%255C+beam%255C+effects%22
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