Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of 365nm. The stress tests were carried out for a period of 8665 hours with forward currents between 350mA and 700mA and junction temperatures up to 132°C. Depending on stress...

Long-Term Temperature-Dependent Degradation of 175 W Chip-on-Board LED Modules

We report on the degradation dynamics and mechanisms of the commercially available chip-on-board (COB) high-power light-emitting diode (LED) modules with an electrical power of 175 W. Due to the associated thermal load, the temperature dependence of the aging processes is additionally analyzed within the scope of this work. The aging tests...