Combined focused electron beam-induced deposition and etching for the patterning of dense lines without interconnecting material

High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between the lines as a result of the Gaussian line profile. We demonstrate the use of focused electron...

A study of the reproducibility of electron beam induced deposition for sub-20 nm lithography

The potential of Electron Beam Induced Deposition (EBID) to become a reliable and reproducible direct-write nanopatterning technique has been investigated. A key requirement is that patterns of sub-20 nm dimension can be reproducibly fabricated and measured. EBID was used for the controlled fabrication of sub-20 nm dense lines on bulk silicon...

Simulation of shotnoise induced side-wall roughness in electron lithography

We have developed a fast three dimensional Monte-Carlo framework for the investigation of shotnoise induced side-wall roughness (SWR) formation. The calculation outline is demonstrated by an example for an exposure of a 100nm thick layer of negative tone resist (NTR) resist on top of an infinitely thick silicon substrate. We use our home...

Size and shape control of sub-20 nm patterns fabricated using focused electron beam-induced processing

In a first study to analyze the feasibility of electron beam-induced deposition (EBID) for creating certain patterns in advanced lithography, line patterns were fabricated on silicon wafers using EBID. The growth conditions were such that the growth rate is fully determined by the electron flux (the current limited growth regime). It is...

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe3...

Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...

Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters

The electron sources in electron microscopes and electron lithography machines often consist of small diameter W(100) wires, etched to form a sharp tip. The electron emission is facilitated by the Schottky effect, thus the name Schottky emitter. The authors are investigating the feasibility of arrays of such electron emitters for the use in...

Mapper: High troughput maskless lithography

MAPPER Lithography is developing a maskless lithography technology. The technology combines massively-parallel electron-beam writing with high speed optical data transport used in the telecommunication industry. The electron optics generates 13,000 electron beams that are focused on the wafer by electrostatic lens arrays which are manufactured...