Electrode/electrolyte interfaces in (photo-)electrochemical devices

Climate change, due to the continued emissions of carbon dioxide into our atmosphere and subsequent warming of the planet, is an existential crisis facing humanity. The rising temperature is are resulting in the melting of our ice caps and glaciers, influencing the weather patterns, are making many parts of the world unliveable and are driving...

Neural-Network Decoders for Quantum Error Correction Using Surface Codes: A Space Exploration of the Hardware Cost-Performance Tradeoffs

Quantum error correction (QEC) is required in quantum computers to mitigate the effect of errors on physical qubits. When adopting a QEC scheme based on surface codes, error decoding is the most computationally expensive task in the classical electronic back-end. Decoders employing neural networks (NN) are well-suited for this task but their...

Antenna-in-Package (AiP) Using Through-Polymer Vias (TPVs) for a 122-GHz Radar Chip

High-performance IC-to-antenna interconnection is one of the key enablers for the mass production of high-end millimeter wave (mmW) radar systems above 100 GHz. In this work, a radar system with an on-package antenna array working at 122 GHz is presented. The antenna is placed on top of the molded package and the antenna-to-chip interconnection...

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100...

Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide...

Single-photon imaging in complementary metal oxide semiconductor processes

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based...

High frame-rate TCSPC-FLIM using a novel SPAD-based image sensor

Imaging techniques based on time-correlated single photon counting (TCSPC), such as fluorescence lifetime imaging microscopy (FLIM), rely on fast single-photon detectors as well as timing electronics in the form of time-to-digital or time-to-analog converters. Conventional systems rely on stand-alone or small arrays (up to 32) of detectors and...

Single-photon imaging in CMOS

We report on the architectural design and fabrication of medium and large arrays of single-photon avalanche diodes (SPADs) for a variety of applications in physics, medicine, and the life sciences. Due to dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of...

Active Harmonic Load–Pull With Realistic Wideband Communications Signals

A new wideband open-loop active harmonic load–pull measurement approach is presented. The proposed method is based on wideband data-acquisition and wideband signal-injection of the incident and device generated power waves at the frequencies of interest. The system provides full, user defined, in-band control of the source and load reflection...

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are becoming so pronounced that they are threatening to...