Searched for: subject:"microscopy"
(1 - 5 of 5)
document
de Visser, P.J. (author), Chua, Rebekah (author), Island, J.O. (author), Finkel, M. (author), Katan, A.J. (author), Thierschmann, H.R. (author), van der Zant, H.S.J. (author), Klapwijk, T.M. (author)
Thin layers of black phosphorus present an ideal combination of a 2Dmaterial with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. Wehave measured the spatial profile of the conductivity on flakes of...
journal article 2016
document
Rosticher, M. (author), Ladan, F.R. (author), Maneval, J.P. (author), Dorenbos, S.N. (author), Zijlstra, T. (author), Klapwijk, T.M. (author), Zwiller, V. (author), Lupa?cu, A. (author), Nogues, G. (author)
We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of a scanning electron microscope with an...
journal article 2010
document
Zijlstra, T. (author), Lodewijk, C.F.J. (author), Vercruyssen, N. (author), Tichelaar, F.D. (author), Loudkov, D.N. (author), Klapwijk, T.M. (author)
High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better reproducibility and control compared to previous...
journal article 2007
document
Gao, J.R. (author), Hajenius, M. (author), Tichelaar, F.D. (author), Klapwijk, T.M. (author), Voronov, B. (author), Grishin, E. (author), Gol'tsman, G. (author), Zorman, C.A. (author), Mehregany, M. (author)
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800?°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4...
journal article 2007
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...
journal article 2002
Searched for: subject:"microscopy"
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