Sub-10 nm structures written in ultra-thin HSQ resist layers, using Electron Beam Lithography

Isolated dots and lines with 6 nm width were written in 20 nm thick Hydrogen silsesquioxane (HSQ) layers on silicon substrates, using 100 keV electron beam lithography. The main factors that might limit the resolution, i.e. beam size, writing strategy, resist material, electron dose, development process, are discussed. We demonstrate that, by...