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Sadeghian Marnani, H. (author), Van den Dool, T.C. (author), Crowcombe, W.E. (author), Herfst, R.W. (author), Winters, J. (author), Kramer, G.F.I.J. (author), Koster, N.B. (author)
With the device dimensions moving towards the 1X node, the semiconductor industry is rapidly approaching the point where 10 nm defects become critical. Therefore, new methods for improving the yield are emerging, including inspection and review methods with sufficient resolution and throughput. Existing industrial tools cannot anymore fulfill...
conference paper 2014