Investigating Mechanical Properties of Silicon Carbide Coated Carbon Nanotube Composite at Elevated Temperatures

Silicon carbide (SiC) coated vertically aligned carbon nanotubes (VACNT) are attractive material for fabricating MEMS devices as an alternative for bulk micromachining of SiC. In order to examine the mechanical properties of SiC-CNT composites at high temperatures, we fabricated VACNT micro-pillars with different amounts of SiC coating and...

Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper...

A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET

The limitation of Silicon based power MOSFET was broken by the super-junction (SJ) structure, which can provide lower specific on-resistance and higher breakdown voltage compared with the conventional power MOSFET structure. Multi-epitaxial and multi-ion-implant technology, as a mature manufacturing process of the SJ structure, has been widely...

2D InP photonic crystal fabrication process development

We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectric column radius of 120 nm. Large efforts have...