Searched for: subject%3A%22plasma%255C+CVD%22
(1 - 4 of 4)
document
Demontis, V. (author), Sanna, C. (author), Melskens, J. (author), Santbergen, R. (author), Smets, A.H.M. (author), Damiano, A. (author), Zeman, M. (author)
Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals ...
journal article 2013
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Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)
In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009
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Pham, H.T.M. (author), De Boer, C.R. (author), Visser, C.C.G. (author), Sarro, P.M. (author)
In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si...
journal article 2005
Searched for: subject%3A%22plasma%255C+CVD%22
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