Sun, Y. (author), Kang, Xuanwu (author), Deng, Shixiong (author), Zheng, Yingkui (author), Wei, Ke (author), Xu, Linwang (author), Wu, Hao (author), Liu, Xinyu (author) We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...
journal article 2021
