Quasi-vertical Gallium Nitride Diodes for Microwave Power Applications

The deployment of fifth-generation (5G) networks requires more closely spaced wireless infrastructures with a high output power to deal with high-frequency signal attenuation issues. Microwave power limiters have been widely used in the RF front-end in various wireless communication systems. A diode limiter circuit prevents the damage of...

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation

We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and...

A Package Integratable Six Port Reflectometer for RF Power Devices

Semiconductor power devices have a growing popularity in industrial, scientific and medical (ISM) band applications, such as microwave-heating, drying and plasma generation. A distinguishable property of these applications is the relentless pursuit of reliability, ruggedness, or the ability to withstand a mismatched loading condition without...

A Package-Integratable Six-Port Reflectometer for RF Power Devices

Semiconductor power devices have a growing popularity in industrial, scientific and medical (ISM) band applications, such as microwave-heating, drying and plasma generation. A distinguishable property of these applications is the relentless pursuit of reliability, ruggedness, or the ability to withstand a mismatched loading condition without...