Searched for: subject:"process"
(1 - 5 of 5)
document
Hari, S. (author), Hagen, C.W. (author), Verduin, T. (author), Kruit, P. (author)
In a first study to analyze the feasibility of electron beam-induced deposition (EBID) for creating certain patterns in advanced lithography, line patterns were fabricated on silicon wafers using EBID. The growth conditions were such that the growth rate is fully determined by the electron flux (the current limited growth regime). It is...
journal article 2014
document
Rosenberg, S.G. (author), Landheer, K. (author), Hagen, C.W. (author), Fairbrother, D.H. (author)
Using three different precursors [MeCpPtMe3, Pt(PF3)4, and W(CO)6], an ultra-high vacuum surface science approach has been used to identify and rationalize the effects of substrate temperature and electron fluence on the chemical composition and bonding in films created by electron beam induced deposition (EBID). X-ray photoelectron spectroscopy...
journal article 2012
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Hagen, C.W. (author), Fokkema, E. (author), Kruit, P. (author)
The virtual source size of a liquid metal ion source is an order of magnitude larger than the size of the region from which the ions are emitted at the source. This source size has a direct effect on the reduced brightness and, hence, on the performance of these sources. The variation of the virtual source size of a gallium liquid metal ion...
journal article 2008
document
Grigorescu, A.E. (author), Van der Krogt, M.C. (author), Hagen, C.W. (author)
journal article 2007
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Grigorescu, A.E. (author), Van der Krogt, M. (author), Hagen, C.W. (author)
Isolated dots and lines with 6 nm width were written in 20 nm thick Hydrogen silsesquioxane (HSQ) layers on silicon substrates, using 100 keV electron beam lithography. The main factors that might limit the resolution, i.e. beam size, writing strategy, resist material, electron dose, development process, are discussed. We demonstrate that, by...
conference paper 2007
Searched for: subject:"process"
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