Pavlov, S.G. (author), Hübers, H.W. (author), Haas, P.M. (author), Hovenier, J.N. (author), Klaassen, T.O. (author), Zhukavin, R.Kh. (author), Shastin, V.N. (author), Carder, D.A. (author), Redlich, B. (author) Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly...
journal article 2008
