Searched for: subject%3A%22resistance%22
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Diware, S.S. (author), Chilakala, Koteswararao (author), Joshi, Rajiv V. (author), Hamdioui, S. (author), Bishnoi, R.K. (author)
Diabetic retinopathy (DR) is a leading cause of permanent vision loss worldwide. It refers to irreversible retinal damage caused due to elevated glucose levels and blood pressure. Regular screening for DR can facilitate its early detection and timely treatment. Neural network-based DR classifiers can be leveraged to achieve such screening in...
journal article 2024
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Jiang, Jing (author), Chen, Wei (author), Qian, Yichen (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)
Considerable advancements in power semiconductor devices have resulted in such devices being increasingly adopted in applications of energy generation, conversion, and transmission. Hence, we proposed a fan-out panel-level packaging (FOPLP) design for 30-V Si-based metal-oxide-semiconductor field-effect transistor (MOSFET). To achieve...
journal article 2023
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Chen, Wei (author), Jiang, Jing (author), Meda, Abdulmelik H. (author), Ibrahim, Mesfin S. (author), Zhang, Kouchi (author), Fan, J. (author)
SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...
journal article 2023
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)
Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...
journal article 2021
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)
Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...
conference paper 2020
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Schouhamer Immink, Kees A. (author), Cai, Kui (author), Weber, J.H. (author)
We consider the transmission and storage of encoded strings of symbols over a noisy channel, where dynamic threshold detection is proposed for achieving resilience against unknown scaling and offset of the received signal. We derive simple rules for dynamically estimating the unknown scale (gain) and offset. The estimates of the actual gain...
journal article 2018
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Escudero-López, Manuel (author), Amat, Esteve (author), Rubio, Antonio (author), Pouyan, P. (author)
Memristors are considered a promising emerging device that may improve some specific applications, like memories, or make feasible new ones, mainly alternative computing architectures. However, it is not a mature technology and their characteristics can vary significantly depending on their structures. Also, variability and reliability might...
conference paper 2017
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Pouyan, P. (author), Amat, Esteve (author), Hamdioui, S. (author), Rubio, Antonio (author)
Emerging technologies such as RRAMs are attracting significant attention, due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures (such as process variation due to their nano-scale structure) have...
conference paper 2016
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