Thermal FEM Analysis of Surge Arresters during HVDC Current Interruption Validated by Experiments

This paper deals with the development of an accurate finite-element model of an arrester to investigate the electrothermal and mechanical stress during dc current interruption. The comprehensive analysis performed on a ZnO surge arrester is supported by experiments during high-voltage dc circuit breaker current interruption. The performed...

Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this purpose. A common requirement for these new technologies is a strict limitation in thermal...

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with...

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis...

Characterization of a photonic strain sensor in silicon-on-insulator technology

Recently there has been growing interest in sensing by means of optical microring resonators in photonic integrated circuits that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. [Proc. SPIE6619, 661914 (2007)PSISDG0277-786X10.1117/12.738412] proposed the use of a silicon-waveguide-based ring resonator as a strain gauge....

Conductive response of a photo-excited sample in a radio-frequent driven resonance cavity

An expression is derived for the perturbative response of a lumped resonance circuit to a sudden change in the circuit parameters. This expression is shown to describe also the photo-induced conductivity of a semiconductor mounted in a single-mode microwave cavity. The power dissipated in the cavity is measured in the two dimensions...

X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and...

Electron transport in n-doped Si/SiGe quantum cascade structures

An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization....

Gas-phase synthesis of nano-structured semiconductors. Advanced materials and processing

Mechanism of a 'Schottky-barrier-limited' Bi2Sr2CaCu2O8+x based sensor for CO and NO