Searched for: subject%3A%22sensor%22
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Abarca, Accel (author), Theuwissen, A.J.P.A.M. (author)
This paper presents a novel technique for dark current compensation of a CMOS image sensor (CIS) by using in-pixel temperature sensors (IPTSs) over a temperature range from −40 °C to 90 °C. The IPTS makes use of the 4T pixel as a temperature sensor. Thus, the 4T pixel has a double functionality, either as a pixel or as a temperature sensor....
journal article 2023
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Theuwissen, A.J.P.A.M. (author)
This article focuses on the angular dependency of the light sensitivity of a commercially available CMOS camera with a global shutter (storage node (SG) in the charge domain) and shared pixel architecture. The angular dependency is characterized as a function of both the wavelength and the angle of incidence of the incoming light. The...
journal article 2022
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Theuwissen, A.J.P.A.M. (author)
This article focuses on the parasitic light sensitivity (PLS) of a commercially available CMOS camera with a global shutter (with a storage node in the charge domain) and shared pixel architecture. The PLS is characterized as a function of both the wavelength and the incident angle of the incoming light. The measurement results are linked to...
journal article 2022
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Abarca Prouza, A.N. (author)
This thesis describes the integration of temperature sensors into a CMOS image sensor (CIS). The temperature sensors provide the in-situ temperature of the pixels as well as the thermal distribution of the pixel array. The temperature and the thermal distribution are intended to be used to compensate for dark current affecting the CIS. Two...
doctoral thesis 2021
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Romijn, J. (author), Vollebregt, S. (author), van Zeijl, H.W. (author), Zhang, Kouchi (author), Leijtens, Johan (author), Sarro, Pasqualina M (author)
In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...
conference paper 2021
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Abarca Prouza, A.N. (author), Theuwissen, A.J.P.A.M. (author)
This article presents in-pixel (of a CMOS image sensor (CIS) temperature sensors with improved accuracy in the spatial and the temporal domain. The goal of the temperature sensors is to be used to compensate for dark (current) fixed pattern noise (FPN) during the exposure of the CIS. The temperature sensors are based on substrate parasitic...
journal article 2020
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)
This paper presents a CMOS image sensor (CIS) with a zoom ADC, to quantize in-pixel temperature sensors, as well as for faster readout speed of the image pixels while maintaining low quantization noise. The proposed 15 bit zoom ADC has a 4 bit Unit Capacitor Array (UCA) SAR and a 13 bit incremental 2<sup>nd</sup>-order delta-sigma ADC (DSADC)...
journal article 2020
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)
This brief proposes a successive approximation register (SAR) analog-to-digital converter (ADC) whose readout speed is improved by 33%, through applying a digital error correction (DEC) method, compared to an alternative without using the DEC technique. The proposed addition-only DEC alleviates the ADC's incomplete settling errors, hence...
journal article 2020
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Stampoglis, Periklis (author)
High speed imagers find applications in many fields such as scientific and medical imaging, automotive applications, machine vision and much more. In this thesis, the design of a high speed, high dynamic range (HDR) CMOS sensor with electronic global shutter (GS) and flexible exposure control is presented. The sensor is designed in the 0.11μm...
master thesis 2019
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Xie, S. (author), Theuwissen, A.J.P.A.M. (author)
This paper presents methodologies for suppressing the spatial and the temporal noise in a CMOS image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise can be suppressed. Meantime, it employs column-level oversampling delta-sigma ADCs to suppress...
journal article 2019
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Pilavaki, Evdokia (author), Valente, V. (author), Demosthenous, Andreas (author)
Point-of-care systems for the detection of infectious diseases are in great demand especially in developing countries. Lateral flow immunoassays are considered ideal biosensors for point-of-care diagnostics due to their numerous advantages. However, to quantify their results a low power, robust electronic reader is needed. A low power CMOS...
journal article 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)
This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique...
journal article 2018
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)
We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...
journal article 2018
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Ge, X. (author), Theuwissen, A.J.P.A.M. (author)
A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-μm CIS process, features pixel-level amplification and achieves an...
journal article 2017
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Zhu, J. (author)
This thesis presents the design of a stitched, high-dynamic range particle sensor in 0.18 µm technology, which has three different configurations of 4096*4096 (4K), 8192*8192 (8K) and 12288*12288 (12K) pixels. It can be operated at 65 MHz with a target of 5 e- RMS noise and 92 dB dynamic range. The architecture of the whole sensor is explained...
master thesis 2014
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Yao, Q. (author)
Low noise image sensors can see images by just a few photons have a wide application in both the scientific and economic fields. This thesis presents a design of a 16*16 pixels CMOS image sensor with a target noise level in the order of 0.5 electrons RMS in 0.18?m technology, which has a potential to catch a large amount of low light imaging...
master thesis 2013
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Ge, X. (author)
The goal of this work described in this thesis is to design a CMOS image sensor chip, implementing pixels with a 4.8?m pitch with a peripheral readout circuitry in a 110nm CMOS process. The architecture of the CMOS image sensor is presented, with a functional illustration for every block. The 8T global shutter pixel noise, circuit and layout are...
master thesis 2012
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Xie, N. (author)
A digital sun sensor is superior to an analog sun sensor in aspects of resolution, albedo immunity, and integration. The proposed Micro-Digital Sun Sensor (µDSS) is an autonomous digital sun sensor which is implemented by means of a CMOS image sensor, which is named APS+. The µDSS is designed specifically for micro-satellite application which...
doctoral thesis 2012
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Chen, Y. (author)
This thesis presents the development of low-noise CMOS image sensors for radio-molecular imaging. The development is described in two directions: firstly, from the technology point of view to reduce the pixel noise level, and secondly from the design point of view to reduce the pixel readout circuits noise level. With respect to the SNR and...
doctoral thesis 2012
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Chen, Y. (author), Theuwissen, A.J.P. (author), Chae, Y. (author)
This paper presents a low noise CMOS image sensor (CIS) using 10/12 bit configurable column-parallel single slope ADCs (SS-ADCs) and digital correlated multiple sampling (CMS). The sensor used is a conventional 4T active pixel with a pinned-photodiode as photon detector. The test sensor was fabricated in a 0.18 colonm CMOS image sensor process...
journal article 2011
Searched for: subject%3A%22sensor%22
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