Comparison of Different Optimization Techniques in Electron Lens Design

To design electron lens systems, applying a fully automated optimization routine has not yet been feasible, especially for the case where the optimization has many free variables of the lens system, such as all parameters that define the geometry of the lens electrodes and the voltage of each electrode. Hence, the study of the implementation of...

Monte Carlo simulation of the secondary electron yield of silicon rich silicon nitride

The effect of doping in Si3N4 membranes on the secondary electron yield is investigated using Monte Carlo simulations of the electron-matter interactions. The effect of the concentration and the distribution of the doping in silicon rich silicon nitride membranes is studied by using the energy loss function as obtained from ab initio density...

Model sensitivity analysis of Monte-Carlo based SEM simulations

The sensitivity of simulated scanning electron microscopy (SEM) images to the various physical model ingredients is studied using an accurate, but slow simulator, to identify the most important ingredients to include in a reliable and fast SEM image simulator. The quantum mechanical transmission probability (QT) model and the electron...

Nebula: Monte Carlo simulator of electron–matter interaction

Monte Carlo simulations are frequently used to describe electron–matter interaction in the 0–50 keV energy range. It often takes hours to simulate electron microscope images using first-principle physical models. In an attempt to maintain a reasonable speed, empirical models are sometimes used. We present an open-source software package with...

Model improvements to simulate charging in scanning electron microscope

Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge....

Surface effects in simulations of scanning electron microscopy images

Background: Monte Carlo simulations of scanning electron microscopy (SEM) images ignore most surface effects, such as surface plasmons. Previous experiments have shown that surface plasmons play an important role in the emission of secondary electrons (SEs).Aim: We investigate the influence of incorporating surface plasmons into simulations...

Estimating Step Heights from Top-Down SEM Images

Scanning electron microscopy (SEM) is one of the most common inspection methods in the semiconductor industry and in research labs. To extract the height of structures using SEM images, various techniques have been used, such as tilting a sample, or modifying the SEM tool with extra sources and/or detectors. However, none of these techniques...

Surface effects in simulations of scanning electron microscopy images

We have investigated the contributions of surface effects to Monte Carlo simulations of top-down scanning electron microscopy (SEM) images. The elastic and inelastic scattering mechanisms in typical simulations assume that the electron is deep in the bulk of the material. In this work, we correct the inelastic model for surface effects. We...

Model improvements to simulate charging in SEM

Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. The improvements...

Sensitivity of secondary electron yields and SEM images to scattering parameters in MC simulations

In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images, there is always the question: are we using the correct scattering cross-sections?. The three scattering processes of interest are quasi-elastic phonon scattering, elastic Mott scattering and inelastic scattering using the dielectric function...

Simulation of shotnoise induced side-wall roughness in electron lithography

We have developed a fast three dimensional Monte-Carlo framework for the investigation of shotnoise induced side-wall roughness (SWR) formation. The calculation outline is demonstrated by an example for an exposure of a 100nm thick layer of negative tone resist (NTR) resist on top of an infinitely thick silicon substrate. We use our home...