High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P⁺/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...

Energy-efficient capacitive-sensor interface based on an incremental Delta-Sigma modulator employing current-starved inverter-based OTAs

An interface circuit for a fully-integrated capacitive humidity-sensor is implemented using 0.16?m standard CMOS technology. This interface circuit is intended to be used in a smart RFID sensor platform. This thesis focuses on improving the energy-efficiency of the interface circuit. A third-order incremental delta-sigma converter based on...