A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 ∘ C (3 σ ) From − 55 ∘ C to 125 ∘ C

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capacitors to the supply voltage and then discharging...

Secure Control for Cyber-Physical Systems under Malicious Attacks

This article investigates the secure control problem for cyber-physical systems when the malicious data are injected into the cyber realm, which directly connects to the actuators. Based on moving target defense (MTD) and reinforcement learning, we propose a novel proactive and reactive defense control scheme. First, the system (A,B) is...

A Wheatstone Bridge Temperature Sensor with a Resolution FoM of 20fJ.K ²

Temperature sensors intended for embedded applications should be both energy-and area-efficient. The combination of Wheatstone-bridge (WhB) sensors and continuous-time ADCs has proven to be highly energy efficient [1], [2]. However, their area (> 0.25 mm{2}) is still larger than that of comparable BJT-based sensors [3], [4]. This paper...