Searched for: subject%3A%22thin%255C-film%255C+transistors%22
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Sberna, P.M. (author), Trifunovic, M. (author), Ishihara, R. (author)
Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Sibased inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of...
journal article 2017
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Trifunovic, M. (author), Shimoda, T (author), Ishihara, R. (author), Sberna, P.M. (author)
Printing of electronics is pursued as a low-cost alternative to conventional manufacturing processes. In addition, owing to relatively low process temperatures, flexible substrates can be used enabling novel applications. Among flexible substrates, paper was found to be a particularly interesting candidate, since it has an order of magnitude...
journal article 2017
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Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)
Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...
journal article 2015
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Zhang, J. (author)
Recently, flexible, wearable and disposable electronics have attracted a lot of attention. Printing enables low-cost fabrication of circuits on flexible substrates. Printed organic and metal oxide thin-film transistors (TFTs) have been researched intensively due to the ease of solution-processing. But their carrier mobility and reliability are...
doctoral thesis 2015
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Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)
We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...
journal article 2014
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Vollebregt, S. (author)
Interconnects in integrated circuits (IC) are the major cause of power dissipation and delay. 3D integration has been proposed as a method to reduce these issues. For this 3D integration, fabrication of high aspect ratio reliable vertical interconnects (vias) are required. For this new materials, like carbon nanotubes (CNT), are being considered...
doctoral thesis 2014
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Aguirre, D.P. (author)
The aim of this thesis is to design, simulate, fabricate and characterize Flexible Vertical Thin Film Transistor (TFT). Flexible Vertical Thin Film Transistors would allow to develop the next generation of high speed flexible circuits, due to their small channel length. Despite of this, to the date, no Flexible Vertical TFTs with an Amorphous...
master thesis 2013
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Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)
Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...
journal article 2013
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Fujii, M. (author), Ishikawa, Y. (author), Ishihara, R. (author), Van der Cingel, J. (author), Mofrad, M.R.T. (author), Horita, M. (author), Uraoka, Y. (author)
In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis...
journal article 2013
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Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)
Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...
conference paper 2011
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Jia, L. (author), d' Acunto, L. (author), Meulpolder, M. (author), Pouwelse, J.A. (author), Epema, D.H.J. (author)
Enhancing reciprocity has been one of the primary motivations for the design of incentive policies in BitTorrent-like P2P systems. Reciprocity implies that peers need to contribute their bandwidth to other peers if they want to receive bandwidth in return. However, the over-provisioning that characterizes today’s BitTorrent communities and the...
conference paper 2011
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Jia, L. (author), Rahman, R (author), Vinko, T. (author), Pouwelse, J.A. (author), Epema, D.H.J. (author)
Many private BitTorrent communities employ Sharing Ratio Enforcement (SRE) schemes to incentivize users to contribute their upload resources. It has been demonstrated that communities that use SRE are greatly oversupplied, i.e., they have much higher seeder-to-leecher ratios than communities in which SRE is not employed. The first order effect...
conference paper 2011
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Gupta, A. (author), Trifunovic, M. (author)
With the so many available sorts of E-paper, the optimal performing and consumer friendly E-paper needs to be found in order to win the E-paper market. As result of this, researchers from the TU Delft are currently developing a technology that can replace all ordinary papers by one single device, which has outperforming characteristics compared...
bachelor thesis 2010
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Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)
In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...
journal article 2010
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Baiano, A. (author)
SG-TFTs fabricated by the ?-Czochralski process have already reached a performance as high as that of SOI MOSFET devices. However, one of the most important and challenging goals is extending SG-TFT technology to reach a higher level of performance than that achieved with SOI technology. This thesis considers two different aspects of this...
doctoral thesis 2009
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Saputra, N. (author), Danesh, M. (author), Baiano, A. (author), Ishihara, R. (author), Long, J.R. (author), Karaki, N. (author), Inoue, S. (author)
journal article 2008
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He, M. (author)
doctoral thesis 2007
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
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Rana, V. (author)
Abstract not available
doctoral thesis 2006
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Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...
journal article 2006
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