Transport through a single donor in p-type silicon

Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon ?1?nm below the surface. The ability to image individual dopants combined with scanning...

Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...