Searched for: subject:"ultrashallow%5C+p%5C%7Eplus%7En%5C+junction%5C+photodiode"
(1 - 2 of 2)
Mohammadi, V. (author), Nihtianov, S. (author)
In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes...
book chapter 2016
Mohammadi, V. (author)
In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This...
doctoral thesis 2015