Fujii, M. (author), Ishikawa, Y. (author), Ishihara, R. (author), Van der Cingel, J. (author), Mofrad, M.R.T. (author), Horita, M. (author), Uraoka, Y. (author) In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis...
journal article 2013
