In the past years, the use of highly sensitive silicon microelectromechanical cantilevers has been proposed as a tool to characterize the spin-crossover phenomenon by employing fast optical readout of the motion. In this work, Fe ^II -based spin-crossover nanoparticles of the well-known [Fe(Htrz) ₂ (trz)](BF ₄ ) complex wrapped with thin silica shells of different sizes will be studied by means of silicon microresonators. The silica shell will enhance its chemical stability, whereas the low thickness will allow a proper mechanical coupling between the cantilever and the spin-crossover core. To maximize the sensing of the spin-crossover phenomena, different cantilever geometries and flexural modes were employed. In addition, the experimental observations were also compared with COMSOL numerical simulations, which are in close agreement with them. The probe of spin-crossover phenomena with micro- and nanoelectromechanical actuators offers the possibility of preparing smart sensing memory devices near/above room temperature.

We use the electrodeless time-resolved microwave conductivity (TRMC) technique to characterize spin-crossover (SCO) nanoparticles. We show that TRMC is a simple and accurate means for simultaneously assessing the magnetic state of SCO compounds and charge transport information on the nanometer length scale. In the low-spin state from liquid nitrogen temperature up to 360 K the TRMC measurements present two well-defined regimes in the mobility and in the half-life times, in which the former transition temperature T_R occurs near 225 K. Below T_R, we propose that an activationless regime taking place associated with short lifetimes of the charge carriers points at the presence of shallow-trap states. Above T_R, these states are thermally released, yielding a thermally activated hopping regime where longer hops increase the mobility and, concomitantly, the barrier energy. The activation energy could originate not only from intricate contributions such as polaronic self-localizations but also from dynamic disorder due to phonons and/or thermal fluctuations of SCO moieties.

Future multifunctional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room temperature while responding to numerous external stimuli. Atomically thin 2D materials such as graphene attract a lot of attention for their fascinating electrical, optical, and mechanical properties, but also for their reliability for room-temperature operations. Here, we demonstrate that thermally induced spin-state switching of spin-crossover nanoparticle thin films can be monitored through the electrical transport properties of graphene lying underneath the films. Model calculations indicate that the charge carrier scattering mechanism in graphene is sensitive to the spin-state dependence of the relative dielectric constants of the spin-crossover nanoparticles. This graphene sensor approach can be applied to a wide class of (molecular) systems with tunable electronic polarizabilities.