With the increase in voltage level and current capacity of the insulated gate bipolar transistor (IGBT), the avalanche effect has become an important factor limiting the safe operating area (SOA) of the device. The hole injection into the p/n junction on the backside of the IGBT after avalanche is the main feature that distinguishes the avalanche effect from other devices. In this paper, the avalanche breakdown characteristics of IGBT and the nature of current filament are investigated using theoretical analysis and numerical simulation, and the underlying physical mechanism controlling the nature of current filaments is revealed. The results show that the hole injection on the backside of the IGBT leads to an additional negative differential resistance (NDR) branch on the avalanche breakdown curve. The device’s common-base current gain, αpnp, is a crucial factor in determining the current filament. As αpnp increases, the avalanche-induced current filament becomes stronger and slower, resulting in weaker avalanche robustness of the device.@en

In this study, a convenient chitosan oligosaccharide laser lithograph (COSLL) technology was developed to fabricate laser-induced graphene (LIG) electrodes and flexible on-chip microsupercapacitors (MSCs). With a simple one-step CO₂ laser, the pyrolysis of a chitosan oligosaccharide (COS) and in situ welding of the generated LIGs to engineering plastic substrates are achieved simultaneously. The resulting LIG products display a hierarchical porous architecture, excellent electrical conductivity (6.3 Ω sq^-1), and superhydrophilic properties, making them ideal electrode materials for MSCs. The pyrolysis-welding coupled mechanism is deeply discussed through cross-sectional analyses and finite element simulations. The MSCs prepared by COSLL exhibit considerable areal capacitance of over 4 mF cm^-2, which is comparable to that of the polyimide-LIG-based counterpart. COSLL is also compatible with complementary metal-oxide-semiconductor (CMOS) and micro-electro-mechanical system (MEMS) processes, enabling the fabrication of LIG/Au MSCs with comparable areal capacitance and lower internal resistance. Furthermore, the as-prepared MSCs demonstrate excellent mechanical robustness, long-cycle capability, and ease of series-parallel integration, benefiting their practical application in various scenarios. With the use of eco-friendly biomass carbon source and convenient process flowchart, the COSLL emerges as an attractive method for the fabrication of flexible LIG on-chip MSCs and various other advanced LIG devices.

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In recent years, flexible strain sensors based on metal cracks have garnered significant interest for their exceptional sensitivity. However, striking a balance between sensitivity and detection range remains a significant challenge, which often limits its wider application. Herein, we introduce an innovative laser transmission pyrolysis technology to fabricate high-performance flexible strain sensors based on (Au) metal cracks with a microchannel array on the PDMS surface. The fabricated flexible strain sensors exhibit high sensitivity, wide detection range, precise strain resolution, fast response and recovery times, and robust durability. Furthermore, this technology has potential applications in microfluidics, microelectromechanical systems, and optical sensing.@en

Flexible strain sensors play a crucial role in health monitoring, smart wearable devices, and human–machine interaction. Three-dimensional surface evaluation methods for strain sensors offer advantages by being closer to actual strain, featuring a larger working range, and being more suitable for multidirectional strain. In this study, a three-dimensional (3D) surface strain sensor based on polydimethylsiloxane/laser-induced graphene (PDMS/LIG) composite films has been developed. The electromechanical properties of this sensor, encompassing 3D strain range and sensitivity, can be adjusted by manipulating laser parameters and LIG patterns. The key to attaining these specific characteristics lies in the intentional design of crack types and orientations on the sensor's surface. Remarkably, the line-vertical (LV) sensor exhibits outstanding sensitivity with a GF of 211.3. The line-parallel (LP) sensor achieves a GF of 115.1. Additionally, it demonstrates a stretching range of 25% and maintains stable performance over an extensive number of strain/release test cycles (more than 3000 cycles). With these advantages, the 3D strain sensor can not only be applied in human activity monitoring but also monitoring pressure within microchannels in microfluidic chips, suggesting promising applications in the health and medical fields.

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The significance of wafer bonding is fundamental to the progression of electronic systems. Common fabrication techniques for Cu pillars play a crucial role in establishing resilient and efficient interconnects within semiconductor devices. It is imperative to explore the potential of nano-copper as an alternative material to overcome limitations associated with conventional copper. The use of nano copper paste in manufacturing has the potential to simplify the process, potentially reducing the number of steps compared to conventional methods. This study delves into the intricacies of wafer-level packaging (WLP), with a particular focus on hybrid bonding processes utilizing nanocopper sintering. Through the application of Finite Element Method (FEM) simulations, we investigate the stress distribution and thermal dynamics inherent in the sintering and hybrid bonding of both bulk copper and nanocopper materials. Our findings illuminate the superior mechanical and thermal properties of nanocopper, which contribute to reduced stress concentrations and enhanced mechanical integrity in semiconductor packaging. The research highlights the pivotal role of nanocopper sintering in advancing WLP technologies, offering insights into optimizing sintering and bonding parameters for improved device reliability and performance.@en

Short-wave ultraviolet (also called UVC) irradiation is a well-adopted method of viral inactivation due to its ability to damage genetic material. A fundamental problem with the UVC inactivation method is that its mechanism of action on viruses is still unknown at the molecular level. To address this problem, herein we investigate the response mechanism of genome materials to UVC light by means of quantum chemical calculations. The spectral properties of four nucleotides, namely, adenine, cytosine, guanine, and uracil, are mainly focused on. Meanwhile, the transition state and reaction rate constant of uracil molecules are also considered to demonstrate the difficulty level of adjacent nucleotide reaction without and with UVC irradiation. The results show that the peak wavelengths are 248.7 nm, 226.1 nm (252.7 nm), 248.3 nm, and 205.8 nm (249.2 nm) for adenine, cytosine, guanine, and uracil nucleotides, respectively. Besides, the reaction rate constants of uracil molecules are 6.419 × 10⁻⁴⁹ s⁻¹ M⁻¹ and 5.436 × 10¹¹ s⁻¹ M⁻¹ for the ground state and excited state, respectively. Their corresponding half-life values are 1.56 × 10⁴⁸ s and 1.84 × 10⁻¹² s. This directly suggests that the molecular reaction between nucleotides is a photochemical process and the reaction without UVC irradiation almost cannot occur.

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Laser-induced graphene (LIG) has aroused a wide range of research interests ranging from micro-nano energy devices to the Internet of Things (IoT). Nevertheless, the non-degradability of most-used synthetic polymer carbon sources poses a serious threat to the environment. In this work, ecofriendly chitosan-based derivatives, including carboxymethyl chitosan (CMCS), chitosan oligosaccharide, and chitosan hydrochloride, are successfully converted into LIGs for the first time via a convenient one-step CO₂ laser engraving at ambient air. The obtained LIGs are characterized by a three-dimensional hierarchical porous structure and exhibit good sheet conductivity. The consecutive carbonization and graphitization mechanism of target precursors induced by laser heat accumulation is also deeply discussed. Besides, based on a mechanically reliable LIG/CMCS composite film and tribo-negative acrylic/polyimide anti-layers, two contact-separation mode triboelectric nanogenerators are built and their power densities range from 1.44 to 2.48 mW cm^-2. These devices with long cycle life can be used for low-frequency mechanical energy harvesting and commercial capacitance charging, which could be potentially applied in the wireless sensor network nodes. Such a family of chitosan derivatives paves a new route for LIG synthesis and provides new ideas for ecofriendly LIG electronics.

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Flexible strain sensors based on nanomaterials have sparked a lot of interest in the field of wearable smart electronics. Laser induced graphene (LIG) based sensors in particular stand out due to their straightforward fabrication procedure, three-dimensional porous structures, and exceptional electromechanical capabilities. Recent studies have focused on LIG composites, however, it is still difficult to achieve great sensitivity and excellent linearity in a wide linear working range. Herein, a strain sensor with high sensitivity and good linearity is prepared in this work, which was realized by carbonizing the polyimide film coated with HfSe₂ to obtain three-dimensional porous graphene nanosheets decorated with HfSe₂ (HfSe₂/LIG). After being transferred to the flexible substrate of Ecoflex, it exhibits high stretchability, hydrophobicity and robustness, and obtains excellent electromechanical properties. The HfSe₂/LIG strain sensor demonstrated high sensitivity (gauge factor, GF ≈ 46), a low detection limit (0.02%), good linearity (R² = 0.99) in a large working range (up to 30%), and a quick response time (0.20 s). Additionally, it exhibits good stability and consistent behavior across a large number of strain/release test cycles (>3000 cycles). With these benefits, the sensor can be used to monitor various limb movements (including finger, wrist and neck movements) and minute artery activity, and can generate reliable signals. Therefore, the HfSe₂/LIG-based sensor has enormous potential for use in wearable intelligent electronics and movement monitoring.

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The fabrication of flexible pressure sensors with low cost, high scalability, and easy fabrication is an essential driving force in developing flexible electronics, especially for high-performance sensors that require precise surface microstructures. However, optimizing complex fabrication processes and expensive microfabrication methods remains a significant challenge. In this study, we introduce a laser pyrolysis direct writing technology that enables rapid and efficient fabrication of high-performance flexible pressure sensors with a micro-truncated pyramid array. The pressure sensor demonstrates exceptional sensitivities, with the values of 3132.0, 322.5, and 27.8 kPa^-1 in the pressure ranges of 0-0.5, 0.5-3.5, and 3.5-10 kPa, respectively. Furthermore, the sensor exhibits rapid response times (loading: 22 ms, unloading: 18 ms) and exceptional reliability, enduring over 3000 pressure loading and unloading cycles. Moreover, the pressure sensor can be easily integrated into a sensor array for spatial pressure distribution detection. The laser pyrolysis direct writing technology introduced in this study presents a highly efficient and promising approach to designing and fabricating high-performance flexible pressure sensors utilizing micro-structured polymer substrates.

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This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (d (Formula presented.) /d (Formula presented.)) from a peak to zero. The simulation results show that the reverse recovery peak current (I (Formula presented.)) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.

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Substrate metallization is a crucial factor affecting the mechanical properties of sintered nanoparticles in microelectronics applications, as it is essential for ensuring good adhesion between the substrate and the sintered material. In this study, we investigated the influence of metallization on pressure-assisted nanocopper sintering and analyzed the related mechanism of interaction using experiments and molecular dynamics simulation. In the first session, we bonded dummy dies on various substrates, including bare Cu, and substrates with Ag or Au metallization by nanocopper pressure-assisted sintering. The mechanical properties of the bonding layers were estimated using shear strength and SEM image analysis of fracture and cross-section morphologies under different sintering conditions. We found that the group of Cu-bare Cu have better bonding strength as the sintering temperature or assisted pressure is not high enough. However, as more energy input to the bonding layer, such as higher temperature or larger sintering pressure, the mechanical performance showed a significant increase. In the second session, a sintering model, which contained a single nanoparticle and substrate, was built to illustrate the effects of metallization from the perspective of solid-state wetting. The contact angle was estimated using a creative method, and the crystallization structure evolutions under different sintering conditions were analyzed. We found that the lattice boundary generated as the Cu nanoparticle coalescence with Ag or Au substrate, which may decrease the bonding strength. However, for Ag and Au metallization, limited interface diffusion can be observed at the neck region, where a few numbers of substrate atoms transmitted toward Cu nanoparticle, and the contact area was larger than that of bare Cu substrate. Finally, a simple uniaxial stretching simulation was conducted to prove the results of sintering simulation. This study provides valuable insights into the effects of metallization on pressure-assisted nanocopper sintering, which can contribute to the optimization of mechanical properties of sintered nanoparticles in microelectronics applications.@en

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by evaluating the voltage and current waveforms, the power dissipation, and the avalanche energy curves before and during avalanche failure. Then, by using the calibrated simulation model, the sequence between the critical electric field stress and critical thermal stress suffered by the device is revealed, and the transient failure mode of the device is proved to be the thermal runaway. Moreover, after decapping the failed device, the failure mode of the device is further confirmed by analyzing the failure point. Finally, by using the focused ion beam (FIB) technology, the failure mechanism of the device is confirmed as a structural rupture caused by avalanche thermal stress.@en

In recent years, metal crack-based stretchable flexible strain sensors have attracted significant attention in wearable device applications due to their extremely high sensitivity. However, the tradeoff between sensitivity and detection range has been an intractable dilemma, severely limiting their practical applications. Herein, we propose a laser transmission pyrolysis (LTP) technology for fabricating high-performance flexible strain sensors based on (Au) metal cracks with the microchannel array on the polydimethylsiloxane (PDMS) surface. The fabricated flexible strain sensors exhibit high sensitivity [gauge factor (GF) of 2448], wide detection range (59% for tensile strain), precise strain resolution (0.1%), fast response and recovery times (69 and 141 ms), and robust durability (over 3000 cycles). In addition, experiment and simulation results reveal that introducing a microchannel array enables the stress redistribution strategy on the sensor surface, which significantly improves the sensing sensitivity compared to conventional flat surface sensors. Based on the excellent performance, the sensors are applied to detect subtle physiological signals, such as pulse and swallowing, as well as to monitor large-scale motion signals, such as knee flexion and finger bending, demonstrating their potential applications in health monitoring, human-machine interactions, and electronic skin.

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Owing to the outstanding physical properties of graphene, its biosensing applications implemented by the terahertz metasurface are widely concerned and studied. Here, we present a novel design of the graphene metasurface, which consists of an individual graphene ring and an H-shaped graphene structure. The graphene metasurface exhibits a dual-resonance response, whose resonance frequency strongly varies with the geometrical parameters of the proposed metasurface, the carrier density of graphene, and the analyte composition. The transparency window, including width and position, can be artificially controlled by adjusting the geometrical parameters or the Fermi energy. Furthermore, the sensing parameters of the graphene metasurface for cancerous and normal cells are investigated, focusing on two factors, namely cell quantity and position on the metasurface. The simulated results clearly show that the theoretical sensitivity, figure of merit, and quantity of the graphene metasurface for breast cells reach 1.21 THz/RIU, 2.75 RIU (Formula presented.), and 2.43, respectively. Our findings may open up new avenues for promising applications in the diagnosis of cancers.

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In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (I rrm ) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (R on,sp ). Compared with the BV of 700 V and the R on,sp of 9 mΩ·cm 2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a R on,sp of 12.4 mΩ·cm 2 . Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (t f ) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.@en

High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by applying a low electric field with a long duration. When the electric field and stress time are up to a certain value, the threshold voltage almost approaches the limitation, which is less than that before irradiation. Meanwhile, the effect of temperature on the recovery of the irradiated devices is also demonstrated. The result indicates that a high temperature of 175 °C used for the irradiated devices’ annealing does not play a role in promoting the recovery of transfer characteristics. In addition, to obtain a deep-level understanding of threshold degradation, the first-principles calculations of three Si/SiO2 interfaces are performed. It is found that new electronic states can be clearly observed in the conduction bans and valence bands after the Si-H/-OH bonds are broken by electron irradiation. However, their distribution depends on the selection of the passivation scheme. Ultimately, it can be observed that the threshold voltage linearly decreases with the increase in interface charge density. These results can provide helpful guidance in the deep interpretation of threshold degradation and the recovery of the irradiated super-junction devices. @en

Recent reports focus on the hydrogenation engineering of monolayer boron phosphide and simultaneously explore its promising applications in nanoelectronics. Coupling density functional theory and finite element method, we investigate the bowtie triangle ring microstructure composed of boron phosphide with hydrogenation based on structural and performance analysis. We determine the carrier mobility of hydrogenated boron phosphide, reveal the effect of structural and material parameters on resonance frequencies, and discuss the variation of the electric field at the two tips. The results suggest that the mobilities of electrons for hydrogenated BP monolayer in the armchair and zigzag directions are 0.51 and 94.4 cm2·V−1·s−1, whereas for holes, the values are 136.8 and 175.15 cm2·V−1·s−1. Meanwhile, the transmission spectra of the bowtie triangle ring microstructure can be controlled by adjusting the length of the bowtie triangle ring microstructure and carrier density of hydrogenated BP. With the increasing length, the transmission spectrum has a red-shift and the electric field at the tips of equilateral triangle rings is significantly weakened. Furthermore, the theoretical sensitivity of the BTR structure reaches 100 GHz/RIU, which is sufficient to determine healthy and COVID-19-infected individuals. Our findings may open up new avenues for promising applications in the rapid diagnosis of COVID-19.@en

The limitation of Silicon based power MOSFET was broken by the super-junction (SJ) structure, which can provide lower specific on-resistance and higher breakdown voltage compared with the conventional power MOSFET structure. Multi-epitaxial and multi-ion-implant technology, as a mature manufacturing process of the SJ structure, has been widely used in the field of SJ-MOSFET. Therefore, this process is applied to construct the cell structure of 650V SJ-MOSFET in our study. Based on practical application, high current caused by unexpected short circuit will induce an increasing of the internal temperature of SJ-MOSFET, which leads to an irreversible damage in the SJ-MOSFET devices. However, the short-circuit robustness of SJ-MOSFET is still unstable, and the structure needs to be further improved. In our study, the electrical performance of a 650V SJ-MOSFET with offset P-pillar is theoretically investigated by means of technology computer aided design (TCAD) when the SJ-MOSFET is short circuited. The results clearly show that the optimized SJ-MOSFET can withstand the source-drain voltage of 400V for at least 10 μs in the case of the short-circuit. The thermal distribution and peak temperature of the cell structure of SJ-MOSFET are also simulated to assist in the analysis of the short circuit capable of the device. In addition, the hole current density distribution of two SJ-MOSFETs is considered to gain insight into the effect of P-pillar parameters on the short-circuit robustness. The result represents that the structure with offset P-pillar can effectively improve the short-circuit capability.@en

The wide-bandgap semiconductors represented by GaN have a broad application prospect because of their high service temperature and high switch frequency. Quad-Flat-No-Lead (QFN) Package is currently one of the mainstream packaging methods due to its low cost and high efficiency. However, the low reliability of QFN used in GaN devices is still a crucial problem caused by elevated temperatures and the thermal stress induced by the mismatch of coefficient of thermal expansion (CTE). Therefore, it is necessary to control the temperature inner the package and increase the mechanical property of the bonding layer. In this paper, the finite element method (FEM) with thermal-mechanical coupling is performed to optimize the reliability of the bonding layer by adopting sinter nano Cu and silver. Based on the conventional QFN package module, we tried to add different metallization on the bonding surface to decrease the influence of CTE mismatch. We should note that the Anand viscoplastic model was used in the materials of Sintered Ag and lead-free solder paste presented by SAC305, which were the most commonly used in die-attachment. The results showed that the utilization of nano copper/silver paste could hardly facilitate thermal performance although sintered Ag had excellent thermal conductivity. Since the Anand modules of Ag and SAC305 were different, there were some impacts on the stress distribution and deformation. During the bonding process, a large thermal stress generated between die-attachment layer and Package or the PCB. The die-attachment layer formed by nano Ag paste suffered the smaller thermal stress because its CTE is comparable to that of thermal pad. In terms of sintered Ag, the bonding layer generated more elastic strain. As the deformation recovered to initial stage, the stress decreased because of the elastic strain. And we also found that the Ag metallization could decreased the maximum stress of model at heating stage. But Ag metallization suffered larger thermal stress as the temperature decreased. The selection of connection materials and metallization are a crucial part of design the structure of electronic package. And this paper could provide a reference for optimize the package structure to further improve their reliability in future works.

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At present, non-equilibrium thermodynamics is an important theory and method for studying the phenomenon of small scales. In this work, by studying the temperature changes of PN junctions under different voltage conditions and doping concentrations, the micro-scale semiconductor materials PN junctions in non-equilibrium thermodynamics and thermal phenomena are researched. It is found that under the effect of lower voltage, the temperature of the PN junction will first decrease and then increase, and as the voltage increases, this phenomenon will gradually disappear. This shows that under certain voltage conditions, the phenomenon of unbalanced junction temperature of the PN junction exists, which will provide a huge impetus for the development of the reliability of solar cells, light-emitting diodes, high-frequency devices, sensors and measurement methods.@en