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Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Journal article (2015) - S. Dutta, R.J.E. Hueting, A.J. Annema, L. Qi, L.K. Nanver, J Schmitz

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

Conference paper (2015) - L. Qi, L.K. Nanver

PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

Journal article (2015) - L. Qi, S Sluyterman, K Kooijman, C. Mok Kai Rine, L.K. Nanver

UV-sensitive low dark-count PureB single-photon avalanche diode

Journal article (2014) - L. Qi, C. Mok Kai Rine, M Aminian, E. Charbon-Iwasaki-Charbon, L.K. Nanver

Fabrication of low dark-count PureB single-photon avalanche diodes

Conference paper (2014) - L. Qi, C. Mok Kai Rine, M Aminian, E. Charbon-Iwasaki-Charbon, L.K. Nanver

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

Journal article (2014) - L.K. Nanver, L. Qi, F Scholze, V. Mohammadi, C. Mok Kai Rine, W.B. de Boer, N. Golshani, A. Sammak, T.L.M. Scholtes, Lukas M. Gottwald, U Kroth

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

Conference paper (2014) - A. Sammak, M Aminian, L. Qi, E. Charbon-Iwasaki-Charbon, L.K. Nanver

UV-sensitive low dark-count PureB single-photon avalanche diode

Conference paper (2013) - L. Qi, C. Mok Kai Rine, T.L.M. Scholtes, M Aminian, E. Charbon-Iwasaki-Charbon, L.K. Nanver

Reverse biasing and breakdown behavior of PureB diodes

Conference paper (2013) - L. Qi, KRC Mok, M Aminian, T.L.M. Scholtes, E. Charbon-Iwasaki-Charbon, L.K. Nanver

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

Journal article (2013) - V. Mohammadi, L. Qi, N. Golshani, C. Mok Kai Rine, W.B. de Boer, A. Sammak, J. Derakhshandeh Kheljani, J. van der Cingel, L.K. Nanver

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Journal article (2013) - A. Sakic, L. Qi, T.L.M. Scholtes, J. van der Cingel, L.K. Nanver

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

Conference paper (2012) - L.K. Nanver, A. Sammak, V. Mohammadi, KRC Mok, L. Qi, A. Sakic, N. Golshani, J Derakhshandeh, T.L.M. Scholtes, W.B. de Boer

A Ge-on-Si single photon avalanche diode operating in Geiger mode at infrared wavelengths

Conference paper (2012) - M Aminian, A. Sammak, L. Qi, L.K. Nanver, E. Charbon-Iwasaki-Charbon

Accession Number: WOS: 000305624700015 Article number: 83750Q@en

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

Journal article (2012) - L. Qi, G. Lorito, L.K. Nanver

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

Conference paper (2012) - A. Sakic, L. Qi, T.L.M. Scholtes, J. van der Cingel, L.K. Nanver

PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region

Journal article (2012) - A. Sammak, L. Qi, W.B. de Boer, L.K. Nanver

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

Conference paper (2011) - G. Lorito, L. Qi, L.K. Nanver

High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region

Conference paper (2011) - A. Sammak, W.B. de Boer, W.B. de Boer, L. Qi, L.K. Nanver

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Conference paper (2011) - A. Sammak, M Aminian, L. Qi, W.B. de Boer, E. Charbon-Iwasaki-Charbon, L.K. Nanver

Simple method to evaluate minority carrier injection levels in schottky diodes

Conference paper (2011) - L. Qi, G. Lorito, L.K. Nanver

L. Qi

Authored

Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions

Sheet resistance measurement for process monitoring of 400 °c PureB deposition on Si

PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV

UV-sensitive low dark-count PureB single-photon avalanche diode

Fabrication of low dark-count PureB single-photon avalanche diodes

Robust UV/VUV/EUV PureB photodiode detector technology with high CMOS Compatibility

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

UV-sensitive low dark-count PureB single-photon avalanche diode

Reverse biasing and breakdown behavior of PureB diodes

VUV/low-energy electron Si photodiodes with postmetal 400°C PureB deposition

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+n junctions

Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices

A Ge-on-Si single photon avalanche diode operating in Geiger mode at infrared wavelengths

Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques

Epitaxial growth of large-area p+n diodes at 400 ºC by aluminum-induced crystallization

PureGaB p +n Ge diodes grown in large windows to Si with a sub -300 nm transition region

Lateral bipolar structures for evaluating the effectiveness of surface doping techniques

High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region

A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths

Simple method to evaluate minority carrier injection levels in schottky diodes