W

Wenmao

5 records found

Authored

A particulate matter micro-sensor for automotive exhaust systems based on a gateless wide-bandgap AlGaN/GaN high electron mobility transistor was developed and tested. Soot particles were generated by a laminar diesel flame and characterized with Raman spectroscopy, thermograv ...

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined wi ...

The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with ...

In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing sign ...

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (2 ...