The authors of the paper “Epitaxy of advanced nanowire quantum devices”¹ wish to retract this work. When preparing the underlying data for public release², it was discovered that some data had been inappropriately deleted or cropped when preparing the final published figures, and we promptly alerted the editors of Nature. We found unjustified data removal and cropping in Figures 4a and c, and Extended Data Figures 7 and 8, which affect the agreement between the theoretical curves and the experimental data and the claims of ballistic transport. We are accordingly retracting the paper. The authors stand by all the other data, and their contribution to advanced nanowire quantum devices. All authors have agreed to this retraction.

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In this Letter, we reported electrical measurements and numerical simulations of hybrid superconducting–semiconducting nanowires in a magnetic field. We reported plateaus in the conductance at 2e2/h, which we interpreted as evidence for the presence of Majorana zero-modes. However, several inconsistencies were pointed out by Sergey Frolov and Vincent Mourik between the raw measurement data that was made available to them and the figures that were published in the paper. We therefore re-analysed all the existing raw data for our original measurements and rebuilt the original experimental set-up for a re-calibration of the conductance values. We established that the data in two of the figures (Fig. 2a and Extended Data Fig. 4b) had been unnecessarily corrected for charge jumps (corrections that were not mentioned explicitly in the paper), and that one of the figure axes was mislabelled (Fig. 4b). The new conductance calibration shifted the plateau values by 8 per cent, above 2e2/h, which affects all the figures1. When the data are replotted over the full parameter range, including ranges that were not made available earlier, points are outside the 2-sigma error bars. We can therefore no longer claim the observation of a quantized Majorana conductance, and wish to retract this Letter. After informing Nature of this decision, Nature issued an Editorial Expression of Concern2 and initiated the retraction process. In ref. 1 we provide all the raw data underlying the published figures as well as the unpublished datasets. Ref. 1 also contains the analysis methods and a side-by-side comparison between the original and the corrected figures. In ref. 3 we provide a new manuscript with corrected and extended datasets, discussed in the context of new insights on zero-energy states in systems with inhomogeneous potentials and disorder. We thank Piet Brouwer, Klaus Ensslin, David Goldhaber-Gordon and Patrick Lee for the expert evaluation report available via ref. 1. We also thank Michael Wimmer and Bernard van Heck for their help with the analyses. We apologize to the community for insufficient scientific rigour in our original manuscript.

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We show a hard superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of 250 mT, an important step toward creating and detecting Majorana zero modes in this system. A hard gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at 180 °C during which aluminum interdiffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature (TC = 0.9 K) and a higher critical field (BC = 0.9-1.2 T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature (TC = 2.9 K) and critical field (BC = 3.4 T) is found. The small size of these diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.@en

The precipitation kinetics of vanadium carbides and its interaction with the austenite-to-ferrite phase transformation is studied in two micro-alloyed steels that differ in vanadium and carbon concentrations by a factor of two, but have the same vanadium-to-carbon atomic ratio of 1:1. Dilatometry is used for heat-treating the specimens and studying the phase transformation kinetics during annealing at isothermal holding temperatures of 900, 750 and 650 °C for up to 10 h. Small-Angle Neutron Scattering (SANS) and Atom Probe Tomography (APT) measurements are performed to study the vanadium carbide precipitation kinetics. Vanadium carbide precipitation is not observed after annealing for 10 h at 900 and 750 °C, which is contrary to predictions from thermodynamic equilibrium calculations. Vanadium carbide precipitation is only observed during or after the austenite-to-ferrite phase transformation at 650 °C. The precipitate volume fraction and mean radius continuously increase as holding time increases, while the precipitate number density starts to decrease after 20 min, which corresponds to the time at which the austenite-to-ferrite phase transformation is finished. This indicates that nucleation and growth are dominant during the first 20 min, while later precipitate growth with soft impingement (overlapping diffusion fields) and coarsening take place. APT shows gradual changes in the precipitate chemical composition during annealing at 650 °C, which finally reaches a 1:1 atomic ratio of vanadium-to-carbon in the core of the precipitates after 10 h.@en

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 10⁴ cm²/(V s), compared to previously studied InSb NWs grown on stems.

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Low-dimensional high-quality InSb materials are promising candidates for next-generation quantum devices due to the high carrier mobility, low effective mass, and large g-factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm ² V ⁻¹ s ⁻¹ and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

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Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell nanowire geometry by controlling the Ge core diameter and correlating the results with theoretical strain calculations. Incorporation of the Sn content in the 10-20 at. % range is achieved with Ge core diameters ranging from 50 nm to 100 nm. While the smaller cores lead to the formation of a regular and homogeneous GeSn shell, larger cores lead to the formation of multifaceted sidewalls and broadened segregation domains, inducing the nucleation of defects. This behavior is rationalized in terms of the different residual strain, as obtained by realistic finite element method simulations. The extended analysis of the strain relaxation as a function of core and shell sizes, in comparison with the conventional planar geometry, provides a deeper understanding of the role of strain in the epitaxy of metastable GeSn semiconductors.@en

Micro- to nano-scale characterization of the microstructures in the white etching layer (WEL), observed in a Dutch R260 Mn grade rail steel, was performed via various techniques. Retained austenite in the WEL was identified via electron backscatter diffraction (EBSD), automatic crystallographic orientation mapping in transmission electron microscopy (ACOM-TEM), and X-ray diffraction (XRD). EBSD and ACOM-TEM methods were used to quantify grains (size range: 50 nm–4 μm) in the WEL. Transmission electron microscopy (TEM) was used to identify complex heterogeneous microstructural morphologies in the WEL: Nano-twinning substructure with high dislocation density in the WEL close to the rail surface and untransformed cementite and dislocations in the WEL close to the pearlite matrix. Furthermore, atom probe tomography (APT) revealed a heterogeneous through-thickness distribution of alloying elements in the WEL. Accordingly, the WEL is considered a multi-layered martensitic microstructure. These findings are supported by the temperature calculations from the shape analysis of the manganese profile from APT measurements, related to manganese diffusion. The deformation characteristics of the WEL and the pearlite beneath the WEL are discussed based on the EBSD measurements. The role of deformation in the martensitic phase transformation for WEL formation is discussed.@en

Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted great interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Landé g-factor that, combined with band structure calculations, provides us qualitative evidence for the direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap.

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Majorana zero-modes - a type of localized quasiparticle - hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e 2 /h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e 2 /h, with a recent observation of a peak height close to 2e 2 /h. Here we report a quantized conductance plateau at 2e 2 /h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

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Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite AlxIn1-xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite AlxIn1-xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.@en

We address the role of non-uniform composition, as measured by energy-dispersive x-ray spectroscopy, in the elastic properties of core/shell nanowires for the Ge/GeSn system. In particular, by finite element method simulations and transmission electron diffraction measurements, we estimate the residual misfit strain when a radial gradient in Sn and a Ge segregation at the nanowire facet edges are present. An elastic stiffening of the structure with respect to the uniform one is concluded, particularly for the axial strain component. More importantly, refined predictions linking the strain and the Sn percentage at the nanowire facets enable us to quantitatively determine the maximum compressive strain value allowing for additional Sn incorporation into a GeSn alloy. The progressive incorporation with increasing shell thickness, under constant growth conditions, is specifically induced by the nanowire configuration, where a larger elastic relaxation of the misfit strain takes place.

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The functionality of semiconductor devices is determined by the incorporation of dopants at concentrations down to the parts per million (ppm) level and below. Optimization of intentional and unintentional impurity doping relies on methods to detect and map the level of impurities. Detecting such low concentrations of impurities in nanostructures is however challenging to date as on the one hand methods used for macroscopic samples cannot be applied due to the inherent small volumes or faceted surfaces and on the other hand conventional microscopic analysis techniques are not sufficiently sensitive. Here, we show that we can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography. We develop a method applicable to a wide variety of nanowires relevant for electronic and optical devices. We expect that it will contribute significantly to the further optimization of the synthesis of nanowires, nanostructures and devices based on these structures.@en