LN
Lis Nanver
330 records found
1
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Authored
Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number o
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Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number o
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Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number o
...
Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with e
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Accession Number: WOS: 000305624700015
Article number: 83750Q@en
Accession Number: WOS: 000305624700015
Article number: 83750Q@en
Accession Number: WOS: 000305624700015
Article number: 83750Q@en
Accession Number: WOS: 000305624700015
Article number: 83750Q@en
Accession Number: WOS: 000305624700015
Article number: 83750Q@en
A well-controlled low-temperature process, demonstrated from 350/spl deg/C to 500/spl deg/C, has been developed for epitaxially growing elevated contacts and near-ideal diode junctions of Al-doped Si in contact windows to the Si substrate. A physical-vapor-deposited (PVD) amorpho
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A well-controlled low-temperature process, demonstrated from 350/spl deg/C to 500/spl deg/C, has been developed for epitaxially growing elevated contacts and near-ideal diode junctions of Al-doped Si in contact windows to the Si substrate. A physical-vapor-deposited (PVD) amorpho
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Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistan
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Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistan
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Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistan
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Electrothermal consequences of implementing bulk-silicon RF power MOS processes in the silicon-on-glass substrate transfer technology are investigated in this paper. Fabricated silicon-on-glass vertical double-diffused MOSFETs are measured on-wafer and very large thermal resistan
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This work presents ultra low-loss co-planar waveguides and Marchand type baluns implemented in an optimized high ohmic silicon substrate technology for RF/microwave applications. The CPW configured baluns operate from 15 to 25GHz with a minimum insertion loss of 0.8 dB at center
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This work presents ultra low-loss co-planar waveguides and Marchand type baluns implemented in an optimized high ohmic silicon substrate technology for RF/microwave applications. The CPW configured baluns operate from 15 to 25GHz with a minimum insertion loss of 0.8 dB at center
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This work presents ultra low-loss co-planar waveguides and Marchand type baluns implemented in an optimized high ohmic silicon substrate technology for RF/microwave applications. The CPW configured baluns operate from 15 to 25GHz with a minimum insertion loss of 0.8 dB at center
...
This work presents ultra low-loss co-planar waveguides and Marchand type baluns implemented in an optimized high ohmic silicon substrate technology for RF/microwave applications. The CPW configured baluns operate from 15 to 25GHz with a minimum insertion loss of 0.8 dB at center
...
This work presents ultra low-loss co-planar waveguides and Marchand type baluns implemented in an optimized high ohmic silicon substrate technology for RF/microwave applications. The CPW configured baluns operate from 15 to 25GHz with a minimum insertion loss of 0.8 dB at center
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