JW

Jingyi Wu

3 records found

Authored

Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O2-plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important process aspects s ...

O2 plasma-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated using an inductively coupled plasma etcher. Silicon oxide layer was used as the hard mask. At 40 W RF bias power and 40 sccm oxygen flow, the etch ...

Ohmic contacts to AlGaN/GaN with different metal stacks on Si or Sapphire substrate are fabricated and compared in this paper. For Au-capped ohmic contacts, the lowest contact resistances of 0.7 Ω·mm and 1.3 Ω·mm are achieved by Ti/Al/Ti/Au (20/110/40/50 nm) and Ti/Al/Ni/Au (2 ...