GD

G. Droulers

6 records found

Authored

Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on el ...

Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving ...

Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of de ...

We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an oxide ...

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processe ...

Quantum computing holds the promise of exponential speedup compared to classical computing for select algorithms and applications. Relatively small numbers of logical quantum bits or qubits could outperform the largest of supercomputers. Quantum dots in Si-based heterostructur ...