GC

Ganhui Chen

2 records found

Authored

In this paper, a method to extend the detection range of hydrogen sulfide (H2S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing sign ...

Wide bandgap gallium nitride material has highly favorable electronic properties for next generation power and high frequency electronic devices. A less widely studied application is highly miniaturized chemical and gas sensors capable of operating ...