L

L.G.

3 records found

Authored

IGBT device is developed from silicon to wide bandgap semiconductor materials, and its working temperature has reached to 300 °C, so the encapsulation is particularly important. NanoCu paste is investigated under H2 at 300°C. A chip is linked to DBC substrate by nanoCu paste u ...

Germanene on single-layer ZnSe substrate

Novel electronic and optical properties

In this work, the structural, electronic and optical properties of germanene and ZnSe substrate nanocomposites have been investigated using first-principles calculations. We found that the large direct-gap ZnSe semiconductors and zero-gap germanene form a typical orbital hybri ...

A systematic study of discrete SiC MOSFETs' reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation acco ...