R

R

11 records found

Authored

Dry etching of SiC in inductively coupled Cl-2/Ar plasma

The etching of silicon carbide in inductively coupled SF6/O-2 plasma
Journal article (2003) - NOV Plank, MA Blauw, E.W.J.M. van der Drift, R Cheung

Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN
Journal article (2003) - R Cheung, B Rong, E.W.J.M. van der Drift, W.G. Sloof

X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films

A study of reactive ion etching damage effects in GaN.

A study of reactive ion etching damage effects in GaN

Inductively coupled plasma etching of GaN and its effect ton electrical characteristics.

Effects of dry processing on the optical properties of GaN.

Improvement of contact resistances on plasma-exposed silicon carbide.
Journal article (2000) - R Cheung, J Hay, E.W.J.M. van der Drift, W Gao

High resolution reactive ion etching of GaN and etch-induced effects.

Dry etching and induced damage
Journal article (1996) - E.W.J.M. van der Drift, R Cheung, T Zijlstra