J

JW Slotboom

65 records found

Authored

Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

Reduction of UHF power transistor distortion with a non-uniform collector doping profile

Bipolar transistor epilayer design using the MAIDS mixed-level simulator

Metal/silicon Schottky barrier lowering by RTCVD interface passivation
Conference paper (2000) - Q Ren, WD van Noort, L.K. Nanver, JW Slotboom

Control of arsenic doping during low temperature CVD epitaxy of Silicon (100)
Journal article (2000) - WD van Noort, L.K. Nanver, JW Slotboom

Reduction of distortion with a non-uniform BJT collector doping profile

A bipolar structure with a tunnelling emitter

Analysis of the emitter charge storage in SiGe heterojunction bipolar transistors with a lightly doped emitter
Conference paper (2000) - LCM van Oever, L.K. Nanver, JW Slotboom

Electrical and physical properties of polysilicon film resistors modified by excimer laser annealing

Ultra-low-temperature low-ohmic contacts for SOA applications

Large signal modeling and verification of silicon RF power transistors
Conference paper (1999) - R Tinti, K. Mouthaan, HC de Graaff, JW Slotboom, JL Tauritz

Bipolar transistor epilayer design using the MAIDS mixed level simulator

As peaks in Si (100) films fabricated with rapid thermal epitaxy

Al contacts to very shallow junctions
Conference paper (1999) - Q Ren, L.K. Nanver, C.C.G. Visser, JW Slotboom

Inverse SiGe heterostructure bipolar transistors (Philips milestone meeting 1-6-1999)

Inverse SiGe heterostructure bipolar transistors (Philips milestone meeting 30-11-1999)

Epitaxial arsenic doping of Si BJT collectors
Conference paper (1999) - WD van Noort, L.K. Nanver, JW Slotboom

Optimisation of the base-collector doping profile for high-frequency distortion

Doping of polysilicon emitters by excimer laser-annealing [niet eerder gehonoreerd]

Buried boron layers as extrinsic base in inverse SiGe HBTs [niet eerder opgevoerd]