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In this work, we present the fabrication technology of a monolithically integrated photonic platform combining key components for optical coherence tomography (OCT) imaging, thereby including a photonic interferometer, a collimating lens, and a 45◦ reflecting mirror that directs ...

A highly miniaturized, single-chip, large scanning range MOEMS scanner is demonstrated. This intrinsically-aligned, monolithically integrated device uses small angular displacement to provide a linear scanning range of 2000 μm in the lateral and 1000 μm in the vertical directi ...

The high aspect ratio and the porous nature of spatially oriented forest-like carbon nanotube (CNT) structures represent a unique opportunity to engineer a novel class of nanoscale assemblies. By combining CNTs and conformal coatings, a 3D lightweight scaffold with tailored behav ...

In this paper, we present an electrothermal biaxial MEMS actuator system, which provides x-A nd y-direction scanning for a fully integrated 3-D optical coherence tomography (OCT) scanner. An angular scanning range of 8° (corresponding to a 7-mm linear scanning range in both di ...

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0 ...

Two novel MEMS actuator systems (a torsional one and a deflecting one) for a new self-aligned integrated 3D optical coherent tomography (OCT) scanner are reported. These new systems, with a footprint of 2.5mm×2.5 mm each, provide a χ and y scanning range of 730 μm (tilting ran ...

We present Si microlenses fabricated using dry ICP plasma etching of silicon and thermal photoresist reflow. The process is insensitive to thermal reflow time and it can be easily incorporated into fabrication flows for complex optical systems. Using this process, we were able to ...
In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature c ...