F

Fatemeh S.M.

2 records found

Authored

To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film ...

The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TMA) is one of the most widely used precursors in experimental and theoretical studies. However, its application at industrial scale can pose safety risks si ...