Person | TU Delft Repository

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Conference paper (2011) - M Poljak, V. Jovanovic, T Suligoj

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Conference paper (2011) - M Poljak, V. Jovanovic, T Suligoj

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article (2010) - V. Jovanovic, C Biasotto, OG Schmidt, L Miglio, L.K. Nanver, J Moers, D Gruetzmacher, J Gerharz, G Mussler, J. van der Cingel, J. Zhang, G Bauer

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Conference paper (2010) - A. Sakic, V. Jovanovic, P Maleki, T.L.M. Scholtes, S. Milosavljevic, L.K. Nanver

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Conference paper (2010) - M Poljak, V. Jovanovic, T Suligoj

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Conference paper (2010) - M Poljak, V. Jovanovic, T Suligoj

Al mediated solid phase epitaxy of silicon on insulator

Conference paper (2010) - A. Sakic, Y Civale, L.K. Nanver, C Biasotto, V. Jovanovic

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Conference paper (2009) - C Biasotto, V Gonda, L.K. Nanver, J. van der Cingel, V. Jovanovic

FinFET Considerations for 0.18 um Technology

Conference paper (2009) - V. Jovanovic, M Poljak, T Suligoj

Improving bulk FinFET DC performance in comparison to SOI FinFET

Journal article (2009) - M Poljak, V. Jovanovic, T Suligoj

Application of Laser Annealing in the EU FP6 Project D-DotFET

Conference paper (2009) - L.K. Nanver, V. Jovanovic, C Biasotto, J. van der Cingel

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Conference paper (2009) - V. Jovanovic, M Poljak, T Suligoj, Y Civale, L.K. Nanver

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Conference paper (2009) - B Svilicic, V. Jovanovic, T Suligoj

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Conference paper (2009) - M Poljak, V. Jovanovic, T Suligoj

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Conference paper (2009) - C Biasotto, V. Jovanovic, L.K. Nanver, J. van der Cingel

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET

Conference paper (2009) - C Biasotto, V. Jovanovic, V Gonda, J. van der Cingel, S. Milosavljevic, L.K. Nanver

X-ray diffraction study of the composition and strain fields in buried SiGe islands

Journal article (2009) - N Hrauda, JJ Zhang, M Stoffel, J Stangl, G Bauer, A Rehman-Khan, V Holy, OG Schmist, V. Jovanovic, L.K. Nanver

Vertical silicon-on-nothing FET: subthreshold slope calculation using compact capacitance model

Journal article (2008) - B Svilicic, V. Jovanovic, T Suligoj

Vertical silicon-on-nothing FET: threshold voltage calculation using compact capacitance model