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document
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Dogan, I. (author), Kramer, N.J. (author), Westermann, R.H.J. (author), Dohnalova, K. (author), Smets, A.H.M. (author), Verheijen, M.A. (author), Greogorkiewicz, T. (author), Van de Sanden, M.C.M. (author)
We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with...
journal article 2013
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...
journal article 2010
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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Van de Sanden, M.C.M. (author)
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...
journal article 2009
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