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1 Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics
article 2016    
Author: Torricelli, F. · Ghittorelli, M. · Smits, E.C.P. · Roelofs, C.W.S. · Janssen, R.A.J. · Gelinck, G.H. · Kovács-Vajna, Z.M. · Cantatore, E.
Keywords: Electronics · Complementary electronics · Ambipolar conduction · Ambipolar semiconductors · Ambipolar transistors · Electronic memory · Polymer transistors · Tri-gate transistors · Industrial Innovation · Nano Technology · HOL - Holst · TS - Technical Sciences
[Abstract]

2 Measurements of Ambipolar Seebeck Coefficients in High-Mobility Diketopyrrolopyrrole Donor–Acceptor Copolymers
article 2017    
Author: Broch, K. · Venkateshvaran,D. · Lemaur, V. · Oliver, Y. · Beljonne, D. · Zelazny, M. · Nasrallah, I. · Harkin, D.J. · Statz, M. · Pietro, R. Di · Kronemeijer, A.J. · Sirringhaus, H.
Keywords: Ambipolar transport · Organic semiconductors · Organic thermoelectrics · Seebeck coefficient · Industrial Innovation · 2015 Nano Technology · HOL - Holst · TS - Technical Sciences
[PDF] [Abstract]

3 Charge trapping in organic transistor memories: on the role of electrons and holes
article 2009    
Author: Debucquoy, M. · Rockelé, M. · Genoe, J. · Gelinck, G.H. · Heremans, P.
Keywords: Electronics · Ambipolar · Charge trapping · Memory · Organic transistor · Tunneling · Ambipolar · Bi-directional · Efficient method · Electrons and holes · Memory · Memory performance · Organic transistor · Polymeric insulators · Semiconductor channels · Threshold voltage shifts · Trapped charge · Tunneling · Gate dielectrics · Gates (transistor) · Threshold voltage · Transistors · Tunneling (excavation) · Wind tunnels · Charge trapping · Industrial Innovation
[Abstract]

4 Physics of organic ferroelectric field-effect transistors
article 2012    
Author: Brondijk, J.J. · Asadi, K. · Blom, P.W.M. · Leeuw, D.M. de
Keywords: Electronics · charge transport · conjugated polymers; ferroelectricity; ferroelectrics; field-effect transistors; fluoropolymers · modeling · nonvolatile memory · organic electronics; thin films · A-density · Ambipolar · Analytical model · Empirical expression · Ferroelectric field effect transistors · Ferroelectric polarization · Low-power consumption · Non-volatile memories · Nondestructive read-out · nonvolatile memory · Organic electronics · Polarized state · Transfer curves · Charge transfer · Computer simulation · Conjugated polymers · Ferroelectric materials · Ferroelectricity · Fluorine containing polymers · Mathematical models · Models · Polarization · Semiconductor materials · Transistors · Organic field effect transistors · Industrial Innovation · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences
[Abstract]

5 Gate-bias controlled charge trapping as a mechanism for NO2 detection with field-effect transistors
article 2011    
Author: Andringa, A.-M. · Meijboom, J.R. · Smits, E.C.P. · Mathijssen, S.G.J. · Blom, P.W.M. · Leeuw, D.M. de
Keywords: Electronics · air quality sensors · charge trapping · field-effect transistors · NO2 sensors · ZnO · Ambipolar semiconductor · Chemiresistors · Commercial sensors · Detection mechanism · Electron trapping · Exponential time · Gate bias · Human health · Nitrogen dioxides · NO sensors · P-type · Positive gate bias · Sensing mechanism · Threshold voltage shifts · ZnO · Air quality · Bias voltage · Charge trapping · Nitrogen oxides · Sensors · Threshold voltage · Zinc oxide · Field effect transistors · Industrial Innovation · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences
[Abstract]

Search results also available in MS Excel format.

Showing 1 to 5 of 5 found. | Sort by date