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Towards a contamination-tolerant EUV power sensor

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Author: Veldhoven, J. van · Putten, M. van · Nieuwkoop, E. · Huijser, T. · Maas, D.J.
Type:lecture
Date:2015
Publisher: TNO
Place: Delft
Source:290th PTB seminar ‘VUV and EUV metrology’, 4-5 November 2015, Berlin, Germany
Identifier: 529111
Keywords: Electronics · High Tech Systems & Materials · Industrial Innovation · Nano Technology Observation, Weapon & Protection Systems · NI - Nano Instrumentation RT - Radar Technology · TS - Technical Sciences

Abstract

In EUV Lithography short-, mid- and long-term control over in-band EUV power is needed for high-yield IC production. Existing sensors can be unstable over time due to contamination and/or degradation. TNO goal: to conceive a stable EUV power sensor. Sensitive to in-band EUV, negligible degradation, insensitive to out-of-band EUV, insensitive to carbon contamination (main type of contamination), and operating in vacuum up to several Pa H2.