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Electrostatic mask protection for extreme ultraviolet lithography

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Author: Moors, R. · Heerens, G.J.
Type:article
Date:2002
Institution: Technisch Physische Dienst TNO - TH
Source:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1, 20, 316-320
Identifier: 236401
Keywords: Instruments · Atmospheric pressure · Capacitors · Charged particles · Contamination · Electric fields · Electrostatics · Masks · Permittivity · Ultraviolet radiation · Extreme ultraviolet lithography (EUVL) · Photolithography

Abstract

Electrostatic protection of mask for extreme ultraviolet lithography (EUVL) was discussed. Both charged and neutral particles could be prevented from moving towards the mask by choosing a nonuniform electrical field. Benefits of electrostatic protection are that it does not affect the EUV beam and works at the small operating pressures in an EUV lithography tool. Experimental results were presented which showed the feasibility of the electrostatic mask protection.