Repository hosted by TU Delft Library

Home · Contact · About · Disclaimer ·
 

GaN C-band HPA for phased-array applications

Publication files not online:

Author: Wanum, M. van · Hek, A.P. de · Vliet, F.E. van
Type:article
Date:2013
Publisher: IEEE
Place: Piscataway,NJ
Source:35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013, 13-16 October 2013, Monterey, CA, USA
Identifier: 488287
doi: doi:10.1109/CSICS.2013.6659229
Keywords: Radar · Gallium nitride · Logic gates · MMICs · Power generation · Radar · Threshold voltage · High power amplifier · Phased array application · Space based SAR system · Defence Research · Defence, Safety and Security · Physics & Electronics · RT - Radar Technology · TS - Technical Sciences

Abstract

In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required. A design bandwidth from 5 to 6 GHz has been used. Simulation and measurement data from on-wafer and mounted samples will be shown. Showing more than 50 W output power with 45% efficiency the HPA shows sufficient performance to be used in a module for state-of-the-art active electronically scanned arrays. The measured output power and efficiency are a record for MMIC amplifiers. © 2013 IEEE.