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Demonstration of Parallel Scanning Probe Microscope for high throughput metrology and inspection

Author: Sadeghian Marnani, H. · Dekker, A. · Herfst, R.W. · Winters, J. · Eigenraam, A.B.C. · Rijnbeek, R.A. · Nulkes, N.
Publisher: SPIE
Source:Cain, J.P.Sanchez, M.I., SPIE Advanced Lithography conference on Metrology, Inspection, and Process Control for Microlithography XXIX, 22-26 February 2015, San Jose, California, USA, 9424
Proceedings of SPIE - The International Society for Optical Engineering
Identifier: 524287
Keywords: Electronics · Parallel atomic force microscope · Scanning probe microscope · Wafer · Mask · CD-metrology · Defect review · Process control · High Tech Systems & Materials · Industrial Innovation · Mechatronics, Mechanics & Materials · OM - Opto-Mechatronics · TS - Technical Sciences


With the device dimensions moving towards the 1X node and below, the semiconductor industry is rapidly approaching the point where existing metrology, inspection and review tools face huge challenges in terms of resolution, the ability to resolve 3D and the throughput. Due to the advantages of sub-nanometer resolution and the ability of true 3D scanning, scanning probe microscope (SPM) and specifically atomic force microscope (AFM) are considered as alternative technologies for CD-metrology, defect inspection and review of 1X node and below. In order to meet the increasing demand for resolution and throughput of CD-metrology, defect inspection and review, TNO has previously introduced the parallel SPM concept, consisting of parallel operation of many miniaturized SPMs on a 300 and 450 mm wafer. In this paper we will present the proof of principle of the parallelization for metrology and inspection. To give an indication of the system’s specifications, the throughput of scanning is 4500 sites per hour, each within an area of 1 μm2 and 1024 ×1024 pixels.