A computer-controlled laser beam recorder with a wavelength of 405 nm has been employed for patterning the deposited resist with feature sizes varying from a few hundreds of nanometers to tens of micrometers. Four inch silicon templates for hot embossing source/ drain electrodes and metallic circuit for a disposable biosensor were obtained. SEM and optical microscopy reveal accurate transfer of developed photoresist structures into the underlying silicon wafer after plasma dry etching. Etch depths between 100 - 600 nm were obtained on the templates, and were further transferred into the imprinted plastic substrate and the metallic layer. © 2009 SPIE.